• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In an embodiment, a lithographic apparatus is arranged to transfer a pattern from a patterning device onto a substrate, wherein the lithographic apparatus includes an air shower and a temperature sensor positioned near the air shower for measuring the temperature of an air stream in the air shower. The temperature sensor is a thermocouple sensor, e.g., of a thermopile arrangement type. The thermocouple sensor includes a plurality of thermocouples in series, wherein a cold junction and a hot junction are provided, the cold junction being connected to a heat sink, and the hot junction being positioned into the air stream of the air shower.
    公开号:NL1036510A1
    申请号:NL1036510
    申请日:2009-02-03
    公开日:2009-08-24
    发明作者:Tjarko Adriaan Rudolf Van Empel；Paulus Bartholomeus Johannes Schaareman
    申请人:Asml Netherlands Bv；
    IPC主号:
    专利说明:

    LITHOGRAPHIC APPARATUS WITH TEMPERATURE SENSOR AND DEVICE MANUFACTURING
    METHOD
    Field [0001] The present invention relates to a lithographic apparatus with a temperature sensor and a method for manufacturing a device.
    Background [0002] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., including part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the "scanning" direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
    In the lithographic apparatus, air showers are used to provide an air stream to various parts of the lithographic apparatus. More general, fluid showers are provided which provide a fluid stream. This temperature is usually measured using NTC (negative temperature coefficient) temperature sensors, which are readily available in a variety of specifications. However, in an environment where temperatures have been measured with a resolution in the sub mK range, the self-heating or NTC temperature sensors may cause erroneous measurements. Also the response time of these measurements can be too slow to be able to effectively control the environment inside the lithographic apparatus.
    SUMMARY
    It is desirable to obtain a temperature sensor which has sufficient sensitivity, accuracy, and a high enough bandwidth for use in a lithographic apparatus.
    [0005] According to an aspect of the invention, there is provided a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, the lithographic apparatus comprises an air shower and a temperature sensor positioned near the air shower for measuring the temperature of an air stream in the air shower, the temperature sensor is a thermocouple sensor.
    [0006] According to an aspect of the invention, a device manufacturing method is provided including transferring a pattern from a patterning device onto a substrate, an air shower is used to provide an air stream including measuring the temperature of an air stream in the air shower with a temperature sensor, the temperature sensor is a thermocouple sensor.
    According to an aspect of the invention, there is provided the use of a temperature sensor in a lithographic apparatus, the temperature sensor measures the temperature of an air stream, where the temperature sensor is a thermocouple sensor.
    LETTER DESCRIPTION OF THE DRAWINGS
    Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: [0009] Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; Figure 2 depicts a schematic view of a part of the lithographic apparatus, in which an air shower is provided with a temperature sensor; Figure 3a, b and c depict cross sectional views of three out of a thermopile temperature sensor as used in an embodiment of the present invention; and Figure 4 depicts a schematic diagram of a processing system to which the temperature sensor is connected.
    DETAILED DESCRIPTION
    Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The apparatus includes an illumination system (illuminator) IL configured to condition a radiation beam B (eg, UV radiation radiation), a support structure (eg, a mask table) MT constructed to support a patterning device (eg, a mask) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters, a substrate table (eg, a wafer table) WT constructed to hold a substrate (eg, a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters, and a projection system (eg, a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (eg , including one or more dies) of the substrate W.
    The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
    The support structure supports, i.e., bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is a hero in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms "reticle" or "mask" may be considered synonymous with the more general term "patterning device." The term "patterning device" used should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate . It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
    The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
    The term "projection system" used should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the radiation exposure being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" may also be considered as synonymous with the more general term "projection system".
    As depicted here, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable mirror array or a type referred to above, or employing a reflective mask).
    The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such "multiple stage" machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
    The lithographic apparatus may also be a type of at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, eg, water, so as to fill a space between the projection system and the substrate . Liquid immersion may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term "immersion" as used does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
    Referring to Figure 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to be part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and / or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
    The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) or the intensity distribution in a pupil plane or the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
    The radiation beam B is incident on the patterning device (e.g., mask MA), which is hero on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which is the beam onto a target portion C or the substrate W. With the aid of the second positioner PW and position sensor IF (eg, an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, eg, so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the mask MA with respect to the path of the radiation beam B, eg, after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate May be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one that is provided on the mask MA, the mask alignment marks may be located between the dies.
    The depicted apparatus could be used in at least one of the following modes: 1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (ie, a single static exposure). The substrate table WT is then shifted in the X and / or Y direction so that a different target portion can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
    2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern beamed to the radiation beam is projected onto a target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-) magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) or the target portion in a single dynamic exposure, whereas the length of the scanning motion has the height (in the scanning direction) of the target portion.
    3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern is imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array or a type as referred to above.
    Combinations and / or variations on the modes described above or use or entirely different modes or use may also be employed.
    A lithographic apparatus comprises a carefully controlled inner environment. For this a number of air showers are present in the lithographic apparatus, which provide a controlled air stream to certain parts of the lithographic apparatus, such as the cavity where the substrate table WT is positioned, or spaces in the lithographic apparatus where measurement systems or projections systems are located. In FIG. 2, a schematic diagram is shown of an air shower 10, which provides a controlled air stream 11 in the lithographic apparatus. A temperature sensor 12 is positioned in the air stream 11 to measure the temperature of the air stream 11 for control purposes. The air stream temperature (at various locations inside the lithographic apparatus) may be used as a control parameter by the control circuitry of the lithographic apparatus. It is noted that in the following description the use of the temperature sensor is discussed as related to air flows. However, the present invention may also be used to measure temperature in other gas flows or, more general, in fluid flows.
    Air temperature may be measured with NTC sensors, which are applied in many present day lithographic apparatus. Switched in a Wheatstone bridge, used with very little power and very advanced amplifier electronics it is possible to reach 0.01 mK resolution and noise at several mK self-heating. However, a number of problems can arise when using NTC temperature sensors in lithographic apparatus applications. The current used in a good signal from an NTC can lead to about one pW power being dissipated in the NTC. This electric dissipation causes the NTC to heat up, reaching a temperature (10 mK) higher than the surrounding gas temperature in the air stream 11. As the air speed changes the NTC self-heating changes so temperature variation is detected due to an air speed variation. Reducing the NTC self-heating directly impacts the resolution and noise performance. Using multiple NTCs in one Wheatstone bridge to share the dissipation shares the heat load, but more than a factor of 10 is difficult to reach when the sensor is large. Then not a local temperature but rather an average temperature is measured. Furthermore, a slow response time may result, typically two seconds. In this case, the temperature variations have already been detected by the time they have been observed and the amplitude measured is only a small fraction of the true amplitude for frequencies> 0.1 Hz.
    Embodiments in accordance with the present invention thus seek to measure air temperature at sub mK level and at high bandwidth (e g., 100 Hz) without significant self-heating related flow sensitivity. This can be used for example for interferometer distance measurement correction in a lithographic apparatus as described above in relation to Figs. 1.
    It has been found that thermocouples when used as temperature sensor 12 have an intrinsic much lower self-heating as voltage is measured instead of resistance. There are two disadvantages to a thermocouple, however: the low signal strength (several pV / K up to a few 100 pV / K, depending on the material combination) and the cold and hot joint. The first disadvantage can be overcome by switching numerous thermocouples in series, for example on a thin film, thus receiving a thermopile sensor. In this manner, the signal can be increased by a factor of 100 to several mV / K or several pV per milli-Kelvin in a small volume.
    FIG. 3a a cross sectional view or a first embodiment or a thermopile temperature sensor 12 is shown. The thermopile temperature sensor 12 comprises a substrate or carrying layer 15, on which a number of thermocouples 16 are provided in a series configuration. In the view of FIG. 3a, the alternating first and second material 17.18 are indicated by different shading. In this embodiment, the substrate 15 is provided as a film or substrate material, e.g., Kapton or polyimide, with a thickness or e.g., 10pm. The alternating first and second materials 17.18 of the thermopile 12 are in this embodiment formed by p and n type of silicon patterns provided on the substrate 15. In an alternative embodiment, more standard thermocouple materials like constantan / copper or Fe / constantan patterns are used as first and second materials 17.18. The thermocouples 16 are provided with a cold junction 13 and a hot junction 14. The cold junction 13 is connected to a heat sink 20, which is provided with a further temperature sensor 19, eg, an NTC sensor, which measures the temperature of the cold junction 13. This further temperature sensor 19 is allowed to have less stringent characteristics with respect to self-heating and bandwidth.
    FIG. 3b, a second embodiment is shown schematically. As the patterns of the thermocouples 16 can be quite thin and narrow a lot of these thermocouples 16 can be placed on the substrate 15, eg, in the form of a foil of say 1 x 2 cm area, creating a thermopile with good measurement characteristics. In the embodiment shown in FIG. 3b, a symmetrical layout of the thermopile temperature sensor 12 is provided, where the ends (eg, 1 cm length) or the foil 15 with thermocouples 16 form the cold junctions 13 and the center of the foil 15 with thermocouples 16 forms the hot junction 14. The foil 15 is thus folded in a 180 degree bend and both cold junctions 13 mounted in a heat sink 20, eg, in the form of an aluminum block 5x5x10mmin size. This heat sink 20 is further provided with an NTC sensor 19 for cold side reference. The are middle part of the curved foil 15 can be positioned in the air stream 11 (see Fig. 2) so the hot junction 14 is properly conditioned by the air stream 11.
    In an exemplary embodiment, a thermopile temperature sensor 12 was formed on a Kapton foil 15, having a foil length of 1 cm, a foil width of 5 mm and a thickness of 10 µm. A total of 400 thermocouple pairs 16 or n-type and p-type silicone (with a thickness of 0.4pm) was formed on the foil 15, each having a sensitivity of 400 pV / K, resulting in a total sensitivity of 0.04 V / K. The dissipation of this exemplary thermopile sensor 12 due to self-heating was found to be negligible.
    The thermopile measures a temperature difference between the cold joint or cold junction 13 and the hot joint or hot junction 14. So, when the temperature on one side is known, the temperature of the other side can be derived. As in the embodiment described above, the reference side of the thermopile temperature sensor 12 can be clamped in the heat sink 20 (eg, a relatively big block of aluminum) and the temperature of the heat sink 20 is determined using the NTC sensor 19. For this side a low response time is an advantage and a small amount of self-heating or the heat sink 20 caused by the NTC sensor 19 is not a problem.
    The other side of the thermopile will be placed in the "to be measured" air stream 11. As this side can be extremely thin, has negligible self-heating and good signal to noise ratio, here the air temperature can be measured fast and precise without the disadvantage of self-heating related flow speed susceptibility.
    An even further embodiment of the temperature sensor according to the present invention is shown schematically in FIG. 3c. In this version, the thermocouples 16 are formed from wire-like materials 17, 18. Again, the cold junctions 13 are provided in a heat sink 20 for cold side reference, and the hot junctions 14 are suspended to allow air to flow freely over the hot junctions 14.
    FIG. 4 the measurement subsystem is shown schematically related to the air stream 11 temperature measurement using a thermopile temperature sensor 12 according to an embodiment of the present invention. The thermopile temperature sensor 12 and the NTC sensor 19 are connected to a processing system 21. The processing system 21 controls and receives the measurement signals from the thermopile temperature sensor 12 and the NTC sensor 19, and processes these into a measurement signal. This measurement signal can then be used by the overall control system of the lithographic apparatus, or by one or more internal subsystems of the lithographic apparatus, such as interferometer-based positioning system of the substrate W and / or the mask M. Other application in the lithographic apparatus include, but are not limited to, temperature measurement in air showers 10 providing air to eg, subsystems provided with interferometers, such as level sensor, and alignment and imaging units.
    In a first aspect, the present invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate as described in the introduction above. In a further embodiment, the thermocouple sensor 12 is or a thermopile arrangement type. This allows to obtain a sufficient high signal strength from the sensor when measuring very small temperatures or temperature differences.
    In a further embodiment, the thermocouple sensor 12 comprises a thin film substrate 15 and a variety of thermocouples 16 in series, the thin film substrate is to provide two ends which form a cold junction and a middle part which forms a hot junction, the two ends being connected to a heat sink 20, and the hot junction being positioned into the air stream or the air shower 11.
    The thin film substrate 15 is made in a further embodiment or Kapton material, which is readily available and easy to handle. As an alternative, a polyimide material may be used.
    The thermocouples 16 comprise n-type and p-type silicon material 17.18 provided on the thin film substrate 15 in a further embodiment. As an alternative the thermopile temperature sensor 12 is formed using constantan and copper patterns as the first and second material 17.18.
    In a further embodiment, the heat sink comprises a metal block, e.g., an aluminum block. This provides sufficient thermal mass to keep the two ends of the thermopile temperature sensor 12 (cold joints) at a stable temperature. The heat sink 20 is provided with an NTC sensor 19 in a further embodiment for providing a reference signal for the cold junction of the thermocouple sensor 12.
    In a further aspect, the present invention relates to a device manufacturing method as described in the introduction, the temperature sensor is similar to one of the described above. Also the present invention relates to the use of a temperature sensor as defined in the introduction, the temperature sensor is similar to the one described above.
    Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms "wafer "or" die "Read may be considered as synonymous with the more general terms" substrate "or" target portion ", respectively. The substrate referred to may be processed, before or after exposure, in for example a track (a tool that typically applies to a layer of resist to a substrate and develops the exposed resist), a metrology tool and / or an inspection tool. Where applicable, the disclosure may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so the term substrate used may also refer to a substrate that already contains multiple processed layers.
    Although specific reference may have been made above to the use of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows , is not limited to optical lithography. In imprint lithography a topography in a patterning device the pattern created on a substrate. The topography of the patterning device may be pressed into a layer or resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
    The terms "radiation" and "beam" used include compass and all types of electromagnetic radiation, including ultraviolet (UV) radiation (eg, having a wavelength of or about 365, 355, 248,193, 157 or 126 nm) and extreme ultra -violet (EUV) radiation (eg, having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
    The term "lens", where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
    While specific expired of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (eg, semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
    The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope or the clause set out below. Other aspects of the invention are set out as in the following numbered clauses. 1. A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, in which the lithographic apparatus comprises an air shower and a temperature sensor positioned near the air shower for measuring a temperature or an air stream in the air shower, temperature sensor is a thermocouple sensor. 2. The lithographic apparatus or clause 1, the thermocouple sensor is configured as a thermopile. 3. The lithographic apparatus of clause 1, the thermocouple sensor comprising a variety of thermocouples in series, a cold junction and a hot junction are provided, the cold junction being connected to a heat sink, and the hot junction being positioned in the air stream or the air shower. 4. The lithographic apparatus of clause 3, including the thin film substrate comprising Kapton. 5. The lithographic apparatus of clause 3, comprising the thermocouples comprising n-type and p-type silicon material provided on a thin film substrate. 6. The lithographic apparatus of clause 3, where the heat sink comprises a metal block. 7. The lithographic apparatus of clause 3, the heat sink is provided with a further temperature sensor for providing a reference signal for the cold junction of the thermocouple sensor. 8. A device manufacturing method including: transferring a pattern from a patterning device onto a substrate; providing an air shower including an air stream; and measuring a temperature of an air stream in the air shower using a temperature sensor, the temperature sensor is a thermocouple sensor. 9. A device manufacturing method according to clause 8, the thermocouple sensor comprising a thermopile. 10. A device manufacturing method according to clause 8, the thermocouple sensor comprising a variety of thermocouples in series, a cold junction and a hot junction are provided, the cold junction being connected to a heat sink, and the hot junction being positioned into the air stream or the air shower. 11. A device manufacturing method according to clause 10, the heat sink is provided with a further temperature sensor for providing a reference signal for the cold junction or the thermocouple sensor. 12. A method of measuring a temperature in a lithographic apparatus, including: measuring a temperature of an air stream in an air shower or the lithographic apparatus, measuring the sensing temperature with a thermocouple sensor. 13. A method according to clause 12, where the thermocouple sensor comprises a thermopile. 14. A method according to clause 12, the thermocouple sensor comprises a variety of thermocouples in series, and further including: providing a cold junction and a hot junction, the cold junction being connected to a heat sink, and the hot junction being positioned into the air stream or the air shower. 15. A method according to clause 14, further including: sensing a temperature of the heat sink with a further temperature sensor; and using the sensed temperature of the heat sink as a reference signal for the cold junction of the thermocouple sens or. 16. A method according to clause 15, including the further temperature sensor comprising an NTC sensor.
    权利要求:
    Claims (1)
    [1]
    A lithography device comprising: an illumination device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being capable of applying a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.
    类似技术:
    公开号 | 公开日 | 专利标题
    US7619207B2|2009-11-17|Lithographic apparatus and device manufacturing method
    US7375794B2|2008-05-20|Lithographic apparatus and device manufacturing method
    JP5485321B2|2014-05-07|Lithographic apparatus, method for calibrating a lithographic apparatus, and device manufacturing method
    US20070153244A1|2007-07-05|Lithographic apparatus and device manufacturing method
    USRE48668E1|2021-08-03|Temperature sensing probe, burl plate, lithographic apparatus and method
    EP1645910B1|2016-09-14|Lithographic apparatus and position measuring method
    US7388652B2|2008-06-17|Wave front sensor with grey filter and lithographic apparatus comprising same
    KR100803267B1|2008-02-14|Focus Determination Method, Device Manufacturing Method, and Mask
    NL1036080A1|2009-05-07|Position measurement system and Lithographic Apparatus.
    KR20160148061A|2016-12-23|Sensor, lithographic apparatus and device manufacturing method
    US20140340659A1|2014-11-20|Lithographic Apparatus and Device Manufacturing Method
    US8854598B2|2014-10-07|Lithographic apparatus and device manufacturing method
    US8072575B2|2011-12-06|Lithographic apparatus with temperature sensor and device manufacturing method
    US7436502B2|2008-10-14|Illumination beam measurement
    US7283249B2|2007-10-16|Lithographic apparatus and a method of calibrating such an apparatus
    US7410880B2|2008-08-12|Method for measuring bonding quality of bonded substrates, metrology apparatus, and method of producing a device from a bonded substrate
    KR101097193B1|2011-12-21|Lithographic apparatus and humidity measurement system
    同族专利:
    公开号 | 公开日
    JP2009200487A|2009-09-03|
    JP5199146B2|2013-05-15|
    US20090213344A1|2009-08-27|
    US8072575B2|2011-12-06|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JPH03189526A|1989-12-20|1991-08-19|Tokin Corp|Thermopile|
    JPH0437172A|1990-06-01|1992-02-07|Fujitsu Ltd|Thermocouple and semiconductor manufacturing device equipped with thermocouple|
    US5087312A|1990-07-11|1992-02-11|Boehringer Mannheim Gmbh|Thermopile having reduced thermal noise|
    JP3008210B2|1990-09-03|2000-02-14|株式会社トーキン|Speed detecting device and size measuring device using array type thermopile|
    JP3008239B2|1993-01-06|2000-02-14|安立計器株式会社|Reference junction compensator for thermocouple thermometer|
    IL126224D0|1998-09-15|1999-05-09|Gerlitz Jonathan|Ear thermometer and detector therefor|
    JP2001074558A|1999-08-31|2001-03-23|Alps Electric Co Ltd|Infra-red sensor|
    JP2001143992A|1999-11-12|2001-05-25|Nikon Corp|Method and apparatus for controlling exposure quantity, method and apparatus for exposure|
    EP1162438A1|2000-06-09|2001-12-12|Meteolabor Ag|Temperature sensor|
    US6670538B2|2001-01-05|2003-12-30|Endevco Corporation|Thermal radiation sensor|
    WO2002075262A1|2001-03-16|2002-09-26|Seiko Epson Corporation|Infrared detection element and method for fabricating the same and equipment for measuring temperature|
    US6470696B1|2001-09-18|2002-10-29|Valerie Palfy|Devices and methods for sensing condensation conditions and for removing condensation from surfaces|
    JP4241245B2|2002-10-25|2009-03-18|株式会社デンソー|Sensor device|
    JP3945385B2|2002-11-15|2007-07-18|オムロン株式会社|Flow sensor and flow measurement method|
    US20060285091A1|2003-07-21|2006-12-21|Parekh Bipin S|Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application|
    JP4374597B2|2004-02-03|2009-12-02|光照 木村|Temperature difference detection method, temperature sensor, and infrared sensor using the same|
    JP2006208177A|2005-01-27|2006-08-10|Denso Corp|Infrared detector|
    JP4835970B2|2005-05-24|2011-12-14|株式会社ニコン|Adjustment method|
    US7440076B2|2005-09-29|2008-10-21|Asml Netherlands B.V.|Lithographic apparatus, device manufacturing method and device manufactured thereby|
    US7978339B2|2005-10-04|2011-07-12|Asml Netherlands B.V.|Lithographic apparatus temperature compensation|
    US7897110B2|2005-12-20|2011-03-01|Asml Netherlands B.V.|System and method for detecting at least one contamination species in a lithographic apparatus|
    JP4775128B2|2006-06-15|2011-09-21|日産自動車株式会社|Infrared detector|US9581255B2|2012-07-23|2017-02-28|Henning, Inc.|Multiple proportion delivery systems and methods|
    JP6245557B2|2013-12-13|2017-12-13|パナソニックＩｐマネジメント株式会社|Electromagnetic relay|
    法律状态:
    2009-11-02| AD1A| A request for search or an international type search has been filed|
    2010-03-01| EDI| The registered patent application has been withdrawn|
    优先权:
    申请号 | 申请日 | 专利标题
    US6420008P| true| 2008-02-21|2008-02-21|
    US6420008|2008-02-21|
    [返回顶部]